Conference
International Conference
* Equal contribution # Corresponding author
Junmo Lee, Chengyang Zhang, Minji Shon, James Read, Sunbin Deng, Omkar Phadke, Prasanna Venkatesan, Ravindran, Mengkun Tian, Yuan-Chun Luo, Tae-Hyeon Kim, Asif Islam Khan, Suman Datta and Shimeng Yu, "BEOL-compatible Non-Volatile Capacitive Synapse with ALD W-doped In2O3 Semiconductor Layer," IEEE International Electron Devices Meeting (IEDM), Dec. 2024.
Omkar Phadke, Tae-Hyeon Kim, Yuan-Chun Luo, Shimeng Yu, "Ferroelectric Nonvolatile Capacitive Synapse for Charge Domain Compute-in-Memory," ECS Transactions, May 2024. [Link]
Tae-Hyeon Kim, Yuan-Chun Luo, Omkar Phadke, James Read, Shimeng Yu, "Engineering nvCap From FEOL to BEOL with Ferroelectric Small-signal Non-destructive Read," IEEE International Memory Workshop (IMW), Seoul, Republic of Korea, May 2024. [Link]
Sunbin Deng, Jungyoun Kwak, Junmo Lee, Khandker Akif Aabrar, Tae-Hyeon Kim, Gihun Choe, Sharadindu Gopal Kirtania, Chengyang Zhang, Wantong Li, Omkar Phadke, Shimeng Yu, Suman Datta, “BEOL compatible oxide power transistors for on-chip voltage conversion in heterogenous 3D (H3D) integrated circuits,” IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 2023. [Link]
Tae-Hyeon Kim, Omkar Phadke, Yuan-Chun Luo, Shimeng Yu, “Tunable non-volatile gate-to-source/drain capacitance of FeFET for capacitive synapse,” IBM AI Hardware Forum, Yorktown Heights, NY, Nov. 2023.
Jinwoo Park*, Tae-Hyeon Kim*, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung-Gook Park#, Hyungjin Kim#, "Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction", IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2022. [Link]
Tae-Hyeon Kim, Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Byung-Gook Park, "Fabrication of Nano-cone RRAM and Analysis of its Electrical Concentration Effect", ChinaRRAM International Workshop, 2017.
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su-Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Reset Current Reduction for RRAM with Si Bottom Electrode", International Conference on Electronics, Information, and Communication (ICEIC), 2017.
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Effect of Si bottom electrode on resistive switching characteristics for Sicompatible 3D vertical memory", The 20th International Vacuum Congress (IVC), 2017.
Domestic Conference
Byeongchan Oh and Tae-Hyeon Kim, "Clipping-Based Weight Quantization for Hardware Neural Network," Korean Conference on Semiconductors (KCS), Feb. 2025.
Hyeonseong Lim and Tae-Hyeon Kim, "Pruning-Assisted Quantization-Aware-Training for High-Performance Computing-in-Memory," Korean Conference on Semiconductors (KCS), Feb. 2025.
Geonwoo Nam and Tae-Hyeon Kim, "Scalability analysis on FeFET-based non-volatile capacitive device," Korean Conference on Semiconductors (KCS), Feb. 2025.
Tae-Hyeon Kim, Byung-Gook Park, "TiOx 기반 저항 변화 메모리의 상부 전극에 따른 정류 특성 연구", IEIE Summer Conference, 2019.
Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Byung-Gook Park, "Effects of pulse amplitude on conductance change of TiOx-based synaptic devices", Korean Conference on Semiconductors (KCS), 2019.
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Su-Hyun Bang, Dong Keun Lee, Byung-Gook Park, "Resistive switching characteristics of a Ni/WOx/p+-Si RRAM by pulse analysis", Korean Conference on Semiconductors (KCS), 2017.
김태현, 김성준, 김민휘, 방수현, 이동근, 박병국, "저전력 동작을 위한 실리콘 나이트라이드 기반의 저항 변화 메모리 소자에서 forming 전압이 미치는 효과", IEIE Summer Conference, 2016.
Tae-Hyeon Kim, Hyungjin Kim, Sungjun Kim, Su-Hyun Bang, Byung-Gook Park, "Resistive Switching Characteristics of RRAM with WOx Switching Layer Prepared by Rapid Thermal Oxidation", Korean Conference on Semiconductors (KCS), 2016.
김태현, 김민휘, 정성헌, 김성준, 박병국, "시뮬레이션을 통한 RRAM crossbar array의 구현과 read margin 및 전력 소모 개선 방안 연구", IEIE Summer Conference, 2015.