Journal

(in preparation) Byeonchan Oh, ..., Tae-Hyeon Kim, "Wake-up effects in RRAM"

(in preparation) Hyeonseong Lim, ..., Tae-Hyeon Kim, "Gradual switching enhancement with pulse width modulation"

(in preparation) Byeonchan Oh, ..., Tae-Hyeon Kim, "Learning algorithm  with PTQ for hardware neural network"

(in preparation) Hyeonseong Lim, ..., Tae-Hyeon Kim, "Pruning algorithm with QAT for hardware neural network"

1. Choong-Ki Kim, James Read, Minji Shon, Tae-Hyeon Kim, Myung-Su Kim, Ji-Man Yu, Min-Soo Yoo, Yang-Kyu Choi#, Shimeng Yu#, "Capacitive Synaptor with Gate Surrounding Semiconductor Pillar (GSSP) Structure and Overturned Charge Injection (OCI) for Compute-in-Memory," Advanced Intelligent Systems, Feb. 2025. [Link]

2. Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, Hyungjin Kim, "Threshold learning algorithm for memristive neural network with binary switching behavior," Neural Networks, Aug. 2024. [Link]

3. Tae-Hyeon Kim, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Hyungjin Kim, "Memristor crossbar array with enhanced device yield for in-memory vector-matrix multiplication," ACS Applied Electronic Materials, Jun. 2024. [Link]

4. Sungjoon Kim, Kyungchul Park, Kyungho Hong, Tae-Hyeon Kim, Jinwoo Park, Sangwook Youn, Hyungjin Kim, Woo Young Choi, "Overshoot-suppressed memristor crossbar array with high yield by AlOx oxidation for neuromorphic system," Advanced Materials Technologies, Jun. 2024. [Link]

5. Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh, Tae-Hyeon Kim, Sihyun Kim, Sangwan Kim, "Demonstration of Bias Scheme for Ferroelectric Field-Effect Transistor (FeFET) Based AND Array Operation," Solid State Electronics, Jun. 2024. [Link]

6. Choong-Ki Kim, Omkar Phadke, Tae-Hyeon Kim, Myung-Su Kim, Ji-Man Yu, Min-Soo Yoo, Yang-Kyu Choi#, Shimeng Yu#, "Capacitive Synaptor with Overturned Charge Injection for Compute-in-Memory," IEEE Electron Device Letters, May, 2024. [Link]

7. Shimeng Yu, Tae-Hyeon Kim, "Semiconductor memory technologies: State-of-the-art and future trends," IEEE Computer, Apr. 2024. [Link]

8. Anni Lu*, Junmo Lee*, Tae-Hyeon Kim*, Muhammed Ahosan Ul Karim, Rebecca Sejung Park, Harsono Simka, Shimeng Yu#, "High-speed emerging memories for AI hardware accelerators," Nature Reviews Electrical Engineering, Jan. 2024.  [Link]

9. Jinwoo Park, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyuree Kim, Tae-Hyeon Kim, Hyungjin Kim, "Implementation of Convolutional Neural Network in Memristor Crossbar Array with Binary Activation and Weight Quantization," ACS Applied Materials & Interfaces, Jan. 2024. [Link]

10. Jihyung Kim, Subaek Lee, Sungjoon Kim, Seyoung Yang, Jung-Kyu Lee, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Woo Young Choi, Sungjun Kim, "Synaptic Characteristics and Vector-Matrix Multiplication Operation in Highly Uniform and Cost-Effective Four-Layer Vertical RRAM Array," Advanced Functional Materials, Nov. 2023. [Link]

11. Tae-Hyeon Kim*, Omkar Phadke*, Yuan-Chun Luo*, Halid Mulaosmanovic, Johannes Mueller, Stefan Duenkel, Sven Beyer, Asif Islam Khan, Suman Datta, Shimeng Yu#, "Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse," IEEE Electron Device Letters, Oct. 2023. [Link]

12. Shimeng Yu, Yuan-Chun Luo, Tae-Hyeon Kim, Omkar Phadke, "Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory," IEEE Electron Devices Magazine, Sep. 2023. [Link]

13. Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho, "Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System," Advanced Materials Interfaces, Jul. 2023. [Link]

14. Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho, "Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems," Nanoscale, Jul. 2023. [Link]

15. Min Suk Song*, Tae-Hyeon Kim*, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim, "Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator," Advanced Intelligent Systems, May 2023. [Link]

16. Geun Ho Lee*, Tae-Hyeon Kim*, Sangwook Youn, Jinwoo Park, Sungjoon Kim, Hyungjin Kim#, "Low-Fluctuation Nonlinear Model Using Incremental Step Pulse Programming with Memristive Devices," Chaos, Solitons & Fractals, May 2023. [Link]

17. Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, Hyungjin Kim, "Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine Tuning Operation," Advanced Intelligent Systems, Mar. 2023. [Link]

18. Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Byung-Gook Park, Woo Young Choi, "Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM," ACS Applied Electronic Materials, Mar. 2023. [Link]

19. Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim#, Woo Young Choi#, "Fuse Devices for Pruning in Memristive Neural Network," IEEE Electron Device Letters, Mar. 2023. [Link]

20. Jongmin Park, Tae-Hyeon Kim#, Osung Kwon, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Sangbum Kim, Sungjun Kim#, "Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM," Nano Energy, Dec. 2022. [Link]

21. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim#, and Byung-Gook Park#, "Enhanced Current-Voltage Nonlinearity by Controlling Oxygen Concentration of TiOx Buffer Layer for RRAM Passive Crossbar Array," Journal of Semiconductor Technology and Science, Dec. 2022. [Link]

22. Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim, "4-bit multilevel operation in overshoot suppressed Al2O3/TiOx resistive random-access memory crossbar array," Advanced Intelligent Systems, Sep. 2022. [Link]

23. Jinwoo Park, Min Suk Song, Sangwook Youn, Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim, "Intrinsic variation effect in memristive neural network with weight quantization," Nanotechnology, Sep. 2022. [Link]

24. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park#, Hyungjin Kim#, "Effect of program error in memristive neural network with weight quantization," IEEE Transactions on Electron Devices, Jun. 2022. [Link]

25. Geun Ho Lee*, Tae-Hyeon Kim*, Yeongjin Hwang, Sungjoon Kim, Jinwoo Park, Kyungho Hong, Byung-Gook Park#, Hyungjin Kim#, "Effect of weight overlap region of memristive synaptic devices on neuromorphic system," Chaos, Solitons & Fractals, Apr. 2022. [Link]

26. Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach," Physical Chemistry Chemical Physics, Dec. 2021. [Link]

27. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park#, Hyungjin Kim#, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos, Solitons & Fractals, Dec. 2021. [Link]

28. Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, Byung-Gook Park, "A novel physical unclonable function (PUF) using 16×16 pure-HfOx ferroelectric tunnel junction array for security applications," Nanotechnology, Nov. 2021. [Link]

29. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Geun Ho Lee, Hussein Nili, Hyungjin Kim, "Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors," Chaos, Solitons & Fractals, Nov. 2021. [Link]

30. Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Md Hasan Raza Ansari, Seongjae Cho, Byung-Gook Park, "A more hardware-oriented spiking neural network based on leading memory technology and its application with reinforcement learning," IEEE Transactions on Electron Devices, Sep. 2021. [Link]

31. Dayoung Kim*, Tae-Hyeon Kim*, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim#, Hyungsoon Shin#, "Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array," IEEE Access, Aug. 2021. [Link]

32. Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park#, Hyungjin Kim#, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system," Nanotechnology, Jul. 2021. [Link]

33. Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Sungjun Kim, Byung-Gook Park, "Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiNx/TiN conductive bridging random access memory observed at sub-µA current," Semiconductor Science and Technology, May 2021. [Link]

34. Sihyun Kim, Ryoongbin Lee, Daewoong Kwon, Tae-Hyeon Kim, Tae Jung Park, Sung-Jin Choi, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents," IEEE Sensors Journal, Apr. 2021. [Link]

35. Tae-Hyeon Kim, Sungjun Kim, Byung-Gook Park#, "Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM," Microelectronic Engineering, Jan. 2021. [Link]

36. Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park, "Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation," IEEE Transactions on Electron Devices, Jan. 2021. [Link]

37. Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation," IEEE Access, Dec. 2020. [Link]

38. Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim, Byung-Gook Park, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM," Applied Physics Letters, Nov. 2020. [Link]

39. Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park#, Hyungjin Kim#, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array," Applied Physics Letters, Oct. 2020. [Link]

40. Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Multilevel switching characteristics of Si3N4-based nano-wedge resistive switching memory and array simulation for in-memory computing application," Electronics, Jul. 2020. [Link]

41. Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim, "Zinc tin oxide synaptic device for neuromorphic engineering," IEEE Access, Jul. 2020. [Link]

42. Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park#, "Fabrication and Characterization of TiOx Memristor for Synaptic Device Application," IEEE Transactions on Nanotechnology, May 2020. [Link]

43. Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application," Semiconductor Science and Technology, May 2020. [Link]

44. Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM," IEEE Transactions on Electron Devices, Apr. 2020. [Link]

45. Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, Byung-Gook Park, "SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory," Applied Physics Letters, May 2019. [Link]

46. Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation," Solid-State Electronics, Apr. 2019. [Link]

47. Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park, "Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application," Solid-State Electronics, Dec. 2018. [Link]

48. Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park, "Dual Functions of V/SiOx/AlOy/p++ Si Device as Selector and Memory," Nanoscale research letters, Dec. 2018. [Link]

49. Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park, "Concurrent events of memory and threshold switching in Ag/SiNx/Si devices," Journal of Vacuum Science & Technology B, Sep. 2018. [Link]

50. Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae-Hyeon Kim, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park, "Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement," Current Applied Physics, Aug. 2018. [Link]

51. Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Byung-Gook Park, "Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current," IEEE Transactions on Nanotechnology, Jul. 2018. [Link]

52. Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park#, "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device," Solid-State Electronics, Feb. 2018. [Link]

53. Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park#, "Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes," Journal of Nanoscience and Nanotechnology, Oct. 2017. [Link]

54. Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park, "Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device," Physical Chemistry Chemical Physics, Aug. 2017. [Link]

55. Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park, "Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory," Solid-State Electronics, Jun. 2017. [Link]

56. Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, Byung-Gook Park, "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory," Materials, May 2017. [Link]

57. Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park, "Nano-cone resistive memory for ultralow power operation," Nanotechnology, Mar. 2017. [Link]

58. Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, Byung-Gook Park, "Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure," Journal of Alloys and Compounds, Nov. 2016. [Link]